首页> 外文OA文献 >Nesting-induced Local Electronic Patterns around a Single As (Te, Se) Vacancy in Iron-based Superconductors
【2h】

Nesting-induced Local Electronic Patterns around a Single As (Te, Se) Vacancy in Iron-based Superconductors

机译:围绕单个as(Te,se)的嵌套诱导局部电子模式   铁基超导体的空缺

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

The local electronic states around a single As (Te, Se) vacancy areinvestigated in order to shed light on the role of ligands in a series ofiron-based superconductors. Such a vacancy can produce a local hoppingcorrection ranging from $-0.22$ eV to 0.12 eV and always induce two in-gapresonance peaks in the local density of states (LDOS) at the fixed symmetricalbias voltages, which are rather robust and irrelevant to the phase ofsuperconducting order parameter. The LDOS images near the defect predominantlypossess $0^o$ and $45^o$ stripes. These energy-dependent charge modulationscreated by quasiparticle interference are originated in the nesting effectbetween the inner (outer) hole Fermi surface around $\Gamma$ point and theinner (outer) electron Fermi surface around $M$ point.
机译:为了阐明配体在一系列铁基超导体中的作用,研究了围绕一个As(Te,Se)空位的局部电子态。这样的空位可以产生范围从-0.22 eV到0.12 eV的局部跳变校正,并且总是在固定的对称偏置电压下在状态局部密度(LDOS)中引起两个共共振峰,这是相当鲁棒的并且与相位无关超导阶数参数缺陷附近的LDOS图像主要具有$ 0 ^ o $和$ 45 ^ o $条纹。这些由准粒子干扰产生的依赖于能量的电荷调制,起源于在$ \ Gamma $点附近的内(外)空穴费米表面与在$ M $点附近的内(外)电子费米表面之间的嵌套效应。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号